Informations du chercheur

Nom complet

MAMOR Mohammed

Grade

PH

Spécialité

Physique des semi-conducteurs

Thématique de recherche

Défauts ponctuels dans les semi-conducteurs et caractéristiques électriques des composants

Laboratoire

Laboratoire Physique, Energies, Environements et ses Applications (LP2EA)

Établissement

Faculté Polydisciplinaire de SAFI

Ouvrages (0 au total)

Aucun ouvrage disponible.

Projets (0 au total)

Aucun projet disponible.

Publications (10 au total)

On the temperature dependence of the current conduction mode in non-homogeneous Pt/n-GaN Schottky barrier diode

Auteur: Mohammed Mamor, Khalid Bouziane, Hind Chakir, Pierre Ruterana

Revue: Physica B: Condensed Matter

Année: 2024

DOI: https://doi.org/10.1016/j.physb.2024.415965

Electrical and structural investigation of Pt/n-type GaN Schottky contacts: The possible origin of inhomogeneous barrier

Auteur: Mohammed Mamor, Marie Pierre Chauvat, Pierre Ruterana

Revue: Materials Science & Engineering B

Année: 2024

DOI: https://doi.org/10.1016/j.mseb.2024.117756

Analysis of barrier inhomogeneities in Ti/p–type strained Si0. 95Ge0. 05 Schottky diodes using reverse current-voltage characteristics

Auteur: Mohammed Mamor, Khalid Bouziane, Hind Chakir, Pierre Ruterana

Revue: Materials Science in Semiconductor Processing

Année: 2024

DOI: https://doi.org/10.1016/j.mssp.2024.108314

Homogeneous barrier height temperature dependence of Au/n-type Gaza’s Schottky diode

Auteur: Hind Chakib, Mohammed Mamor, Khalid Bouziane

Revue: Indian journal of physics

Année: 2024

DOI: https://doi.org/10.1007/s12648-023-02925-3

On the alloying and strain effects of divacancy energy level in n-type Si1 − xGex

Auteur: Mohammed Mamor, Khalid Bouziane, Malik Maaza

Revue: Journal of Applied Physics

Année: 2019

Critical Current Density and Vortex Pinning Strength in the κ-(BEDT-TTF)2Cu[N(CN)2]Br Organic Superconductor

Auteur: Youssef Ait Ahmed, Ahmed Tirbiyine, Ahmed Taoufik, Mohammed Mamor, Hassan El Ouaddi, Hassan Chaib, Abdelhakim Nafidi, Sadok Senoussi

Revue: Journal of Physical Science

Année: 2018

Disorder effect and the vortex phase transition in layered organic superconductor κ-(BEDT-TTF) 2Cu [N (CN) 2] Br

Auteur: H El Ouaddi, A Tirbiyine, A Taoufik, Y Ait Ahmed, A Hafid, M Mamor, H Chaib, A Nafidi, S Snoussi

Revue: Magn. Reson. Solids

Année: 2018

Mn fraction substitutional site and defects induced magnetism in Mn-implanted 6H-SiC

Auteur: K Bouziane, M Al Azri, M Elzain, SM Chérif, Mohammed Mamor, A Declémy, L Thomé

Revue: Journal of Alloys and Compounds

Année: 2015

On the electrical characteristics of Au/n-type GaAs Schottky diode

Auteur: Mohammed Mamor, K Bouziane, A Tirbiyine, H Alhamrashdi

Revue: Superlattices and Microstructures

Année: 2014

Communications (7 au total)

Gaussian distribution of barrier heights in Pd/n-type Si0.90Ge0.10 Schottky diode from reverse current voltage characteristics

Manifestation: 6th international conference on materials science & nanotechnology

Date: 2025-10-27

Organisation: Tenerife Espagne

Investigation of barrier height inhomogeneities in metal/n-type GaN Schottky contacts

Manifestation: 47th international Workshop on Compound Semiconductor Devices and Integrated Circuits (Wocsdice-Exmatec 2024)

Date: 2024-19-05

Organisation: Heraklion, in Crete, Greece.

BARRIER INHOMOGENEITIES OF AU-N-GAAS SCHOTTKY DIODE

Manifestation: first edition of Autumn School of Set-valued and Variational Analysis of Safi

Date: 2023-11-15

Organisation: Polydisciplinary Faculty, Safi, Cadi Ayyad University

STABILISATION DES MODÈLES FLOUS T-S AVEC UN RETARD CONSTANT

Manifestation: first edition of Autumn School of Set-valued and Variational Analysis of Safi

Date: 2023-11-15

Organisation: Polydisciplinary Faculty, Safi, Cadi Ayyad University

Electrical characterization of He-ion irradiated Pd/n-SiGe Schottky diode

Manifestation: Materials Research Society (MRS) Fall 2018 conference

Date: 2018-11-26

Organisation: Boston, USA

Metal Schottky contacts to GaN epilayer grown by MOCVD

Manifestation: Congrés Energy, Materials, and Nanotechnology (EMN) Meeting on Epitaxy- Budapest, Hungary

Date: 2016-09-04

Organisation: Budapest, Hungary

Schottky contacts to n-type GaAs: Barrier inhomogeneities and interface states

Manifestation: 12th International Conference on Condensed Matter and Statistical Physics (ICCMSP)

Date: 2013-10-30

Organisation: Errachidia, Morocco

Thèses (0 au total)

Aucune thèse disponible.