Gaussian distribution of barrier heights in Pd/n-type Si0.90Ge0.10 Schottky diode from reverse current voltage characteristics - Détails de la communication

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Gaussian distribution of barrier heights in Pd/n-type Si0.90Ge0.10 Schottky diode from reverse current voltage characteristics

Auteur

Mohammed Mamor

Manifestation

6th international conference on materials science & nanotechnology

Date

2025-10-27

Organisation

Tenerife Espagne

Chercheur

MAMOR Mohammed

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